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产品概述

FDD3860-G

描述: 100V N-CHANNEL POWERTRENCH MOSFE

起订量:

库存:35000

Series:

包装:-

产品参数

Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
6.2A (Ta), 29A (Tc)
Drain to Source Voltage (Vdss) :
100 V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
1740 pF @ 50 V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 175°C (TJ)
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Max) :
3.75W (Ta), 83W (Tc)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
36mOhm @ 5.9A, 10V
Supplier Device Package :
TO-252, (D-Pak)
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
4.5V @ 250µA
Datasheets
FDD3860-G

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