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产品概述

FCP11N60F

描述: POWER FIELD-EFFECT TRANSISTOR, 1

起订量:

库存:35000

Series:

包装:-

产品参数

Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
11A (Tc)
Drain to Source Voltage (Vdss) :
600 V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
1490 pF @ 25 V
Mounting Type :
Through Hole
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
TO-220-3
Power Dissipation (Max) :
125W (Tc)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
380mOhm @ 5.5A, 10V
Supplier Device Package :
TO-220-3
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±30V
Vgs(th) (Max) @ Id :
5V @ 250µA
Datasheets
FCP11N60F

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