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产品概述

FCB36N60NTM

描述: POWER MOSFET, N-CHANNEL, SUPREMO

起订量:

库存:35000

Series:

包装:-

产品参数

Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
36A (Tc)
Drain to Source Voltage (Vdss) :
600 V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
4785 pF @ 100 V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Max) :
312W (Tc)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
90mOhm @ 18A, 10V
Supplier Device Package :
D²PAK (TO-263)
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±30V
Vgs(th) (Max) @ Id :
4V @ 250µA
Datasheets
FCB36N60NTM

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