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产品概述

FDD86081-F085

描述: MOSFET N-CH 100V 21A TO252-3

起订量:

库存:35000

Series:

包装:-

产品参数

Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
6.7A (Ta), 21.4A (Tc)
Drain to Source Voltage (Vdss) :
100 V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
493 pF @ 50 V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 175°C (TJ)
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Max) :
3W (Ta), 31.3W (Tc)
Product Status :
Obsolete
Rds On (Max) @ Id, Vgs :
31.5mOhm @ 6A, 10V
Supplier Device Package :
D-PAK (TO-252)
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
4.5V @ 36µA
Datasheets
FDD86081-F085

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