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产品概述

FQD10N20LTM

描述: MOSFET N-CH 200V 7.6A TO252

起订量:

库存:6300

Series:

包装:-

产品参数

Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
7.6A (Tc)
Drain to Source Voltage (Vdss) :
200 V
Drive Voltage (Max Rds On, Min Rds On) :
5V, 10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds :
830 pF @ 25 V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Max) :
2.5W (Ta), 51W (Tc)
Product Status :
Last Time Buy
Rds On (Max) @ Id, Vgs :
360mOhm @ 3.8A, 10V
Supplier Device Package :
D-Pak
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
2V @ 250µA
Datasheets
FQD10N20LTM

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