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产品概述

FQD7N10LTM

描述: MOSFET N-CH 100V 5.8A DPAK

起订量:

库存:42945

Series:

包装:-

产品参数

Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
5.8A (Tc)
Drain to Source Voltage (Vdss) :
100 V
Drive Voltage (Max Rds On, Min Rds On) :
5V, 10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds :
290 pF @ 25 V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Max) :
2.5W (Ta), 25W (Tc)
Product Status :
Last Time Buy
Rds On (Max) @ Id, Vgs :
350mOhm @ 2.9A, 10V
Supplier Device Package :
TO-252AA
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
2V @ 250µA
Datasheets
FQD7N10LTM

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